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this is information on a product in full production. july 2013 doc id 022226 rev 3 1/13 STY105NM50N n-channel 500 v, 0.019 typ., 110 a, mdmesh? ii power mosfet in a max247 package datasheet - production data figure 1. internal schematic diagram features ? max247 worldwide best r ds(on) ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance applications ? switching applications description this device is an n-channel power mosfet developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. $0y ' * 6 1 2 3 max247 order code v dss @t jmax r ds(on) max i d STY105NM50N 550 v < 0.022 110 a table 1. device summary order code marking package packaging STY105NM50N 105nm50n max247 tube www.st.com
contents STY105NM50N 2/13 doc id 022226 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
doc id 022226 rev 3 3/13 STY105NM50N electrical ratings 13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 110 a i d drain current (continuous) at t c = 100 c 88 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 440 a p tot total dissipation at t c = 25 c 625 w dv/dt (2) 2. i sd 110 a, di/dt 400 a/s, v ds peak v (br)dss , v dd = 80% v (br)dss . peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.2 c/w r thj-amb thermal resistance junction-ambient max 30 c/w table 4. avalanche characteriscics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 17 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar , v dd =50) 809 mj
electrical characteristics STY105NM50N 4/13 doc id 022226 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 500 v i dss zero gate voltage drain current (v gs = 0) v ds = 500 v v ds = 500 v, t c =125 c 10 150 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 52 a 0.019 0.022 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 9600 - pf c oss output capacitance - 500 - pf c rss reverse transfer capacitance -22-pf c oss(eq) (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as coss when v ds increases from 0 to 80% v ds equivalent output capacitance v ds = 0 to 400 v v gs = 0 - 1675 - pf r g intrinsic gate resistance f = 1 mhz open drain - 1.3 - q g total gate charge v dd = 400 v, i d = 110 a, v gs = 10 v (see figure 15 ) - 326 - nc q gs gate-source charge - 40 - nc q gd gate-drain charge - 180 - nc
doc id 022226 rev 3 5/13 STY105NM50N electrical characteristics 13 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 250 v, i d = 55 a, r g = 4.7 , v gs = 10 v (see figure 16 ) (see figure 19 ) -47-ns t r rise time - 88 - ns t d(off) turn-off delay time - 353 - ns t f fall time - 70 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 110 440 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 110 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 55 a, di/dt = 100 a/s v dd = 100 v (see figure 16 ) -552 ns q rr reverse recovery charge - 13.2 c i rrm reverse recovery current - 48 a t rr reverse recovery time i sd = 55 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 16 ) -672 ns q rr reverse recovery charge - 19.5 c i rrm reverse recovery current - 58 a
electrical characteristics STY105NM50N 6/13 doc id 022226 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized bv dss vs temperature figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c sinlge pulse am14793v1 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 single pulse =0.5 am09125v1 4v 5v 6v v gs =10v i d 120 80 40 0 0 8 v ds (v) 16 (a) 41220 160 200 240 7v am14794v1 i d 120 80 40 0 0 4 v gs (v) 8 (a) 26 160 200 240 v ds = 10 v am14795v1 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 i d =1ma 1.08 1.10 am09028v1 r ds(on) 0.0190 0.0185 0.0180 0.0175 0 40 i d (a) ( ) 20 60 0.0195 0.0200 v gs =10v 80 100 am14797v1
doc id 022226 rev 3 7/13 STY105NM50N electrical characteristics 13 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward vs temperature figure 13. output capacitance stored energy v gs 6 4 2 0 0 50 q g (nc) (v) 200 8 100 150 10 v dd =400v i d =110a 250 12 150 100 50 0 300 350 v ds (v) 300 200 250 v ds am14798v1 c 1000 100 10 0 40 v ds (v) (pf) 20 60 ciss coss crss 10000 am14799v1 v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250 a am16400v1 r ds(on) 2.0 1.5 1.0 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 i d = 55 a v gs = 10 v am16401v1 0 40 20 100 60 80 0.4 0.6 0.8 1.0 1.2 v sd (v) i sd (a) t j =-50c t j =150c t j = 25c am16402v1 e oss 30 20 10 0 0 100 v ds (v) (j) 400 40 200 300 50 500 am16403v1
test circuits STY105NM50N 8/13 doc id 022226 rev 3 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
doc id 022226 rev 3 9/13 STY105NM50N package mechanical data 13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STY105NM50N 10/13 doc id 022226 rev 3 table 9. max247 mechanical data dim. mm min. typ. max. a 4.70 5.30 a1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 d 19.70 20.30 e 5.35 5.55 e 15.30 15.90 l 14.20 15.20 l1 3.70 4.30
doc id 022226 rev 3 11/13 STY105NM50N package mechanical data 13 figure 20. max247 drawing 0094330_rev_d
revision history STY105NM50N 12/13 doc id 022226 rev 3 5 revision history table 10. document revision history date revision changes 14-sep-2011 1 first release. 15-nov-2012 2 document status promoted from preliminary to production data. added section 2.1: electrical characteristics (curves) . minor text changes. 29-jul-2013 3 ? updated v (br)dss in table 5: on /off states . ? updated figures in section 3: test circuits .
doc id 022226 rev 3 13/13 STY105NM50N 13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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